JPS634715B2 - - Google Patents
Info
- Publication number
- JPS634715B2 JPS634715B2 JP56085234A JP8523481A JPS634715B2 JP S634715 B2 JPS634715 B2 JP S634715B2 JP 56085234 A JP56085234 A JP 56085234A JP 8523481 A JP8523481 A JP 8523481A JP S634715 B2 JPS634715 B2 JP S634715B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- npn transistor
- semiconductor substrate
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 28
- 239000002184 metal Substances 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/311—Design considerations for internal polarisation in bipolar devices
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085234A JPS57199251A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085234A JPS57199251A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57199251A JPS57199251A (en) | 1982-12-07 |
| JPS634715B2 true JPS634715B2 (en]) | 1988-01-30 |
Family
ID=13852866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56085234A Granted JPS57199251A (en) | 1981-06-01 | 1981-06-01 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199251A (en]) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
| US5032529A (en) * | 1988-08-24 | 1991-07-16 | Harris Corporation | Trench gate VCMOS method of manufacture |
-
1981
- 1981-06-01 JP JP56085234A patent/JPS57199251A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57199251A (en) | 1982-12-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100208632B1 (ko) | 반도체 집적 회로 및 그 제조 방법 | |
| US4323913A (en) | Integrated semiconductor circuit arrangement | |
| JPH0216017B2 (en]) | ||
| US3760239A (en) | Coaxial inverted geometry transistor having buried emitter | |
| US4564855A (en) | High current PNP transistor forming part of an integrated monolithic circuit | |
| JPS634715B2 (en]) | ||
| US4144106A (en) | Manufacture of an I2 device utilizing staged selective diffusion thru a polycrystalline mask | |
| JPS6133261B2 (en]) | ||
| JPH11121768A (ja) | 半導体集積回路 | |
| JPS6155775B2 (en]) | ||
| US4303932A (en) | Lateral transistor free of parisitics | |
| US5777376A (en) | Pnp-type bipolar transistor | |
| KR100247281B1 (ko) | 바이폴라 트랜지스터 구조를 이용한 접합 축전기 및 그 제조 방법 | |
| JPS63140561A (ja) | 半導体集積回路の製造方法 | |
| GB1249812A (en) | Improvements relating to semiconductor devices | |
| JP3135615B2 (ja) | 半導体装置及びその製造方法 | |
| KR900000816B1 (ko) | I^2l소자의 제조방법 | |
| JP3311037B2 (ja) | 半導体装置 | |
| JPS60218878A (ja) | 半導体集積回路 | |
| JP2940203B2 (ja) | セミカスタム半導体集積回路 | |
| JPS644349B2 (en]) | ||
| JPS6156624B2 (en]) | ||
| JPS6031105B2 (ja) | 半導体装置 | |
| JPH0558256B2 (en]) | ||
| JPS6333306B2 (en]) |